IRF6613PBF 查看數據表（PDF） - International Rectifier

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比赛名单

IRF6613PBF

DirectFET Power MOSFET

International Rectifier 

IRF6613PbF

+

‚

-



RG

D.U.T

Driver Gate Drive

+

P.W.

Period

D=

P.W.

Period

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

D.U.T. ISD Waveform

-„ +

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

• di/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

VDD

Re-Applied

+ Voltage

-

Body Diode

InIdnudcutcotor rCCuurerrnetnt

Forward Drop

Ripple ≤ 5%

* VGS = 5V for Logic Level Devices

* VGS=10V

VDD

ISD

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET™ Substrate and PCB Layout, MT Outline

(Medium Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

D

D

S

G

S

D

D

6

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