STB15NM60ND 查看數據表（PDF） - STMicroelectronics

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产品描述 (功能)

比赛名单

STB15NM60ND

N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

STMicroelectronics 

Electrical ratings

STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-repetitive (pulse

width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

Max value

Unit

6

A

300

mJ

4/19

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