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STB15NM60ND 查看數據表(PDF) - STMicroelectronics

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STB15NM60ND Datasheet PDF : 19 Pages
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Electrical characteristics STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min Typ Max Unit
17
ns
20
ns
47
ns
28
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 14 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =14 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 14 A
Tj = 150 °C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
14 A
56 A
1.3 V
148
ns
910
nC
12
A
190
ns
1280
nC
13
A
6/19

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