Q67042-S4075 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

比赛名单

Q67042-S4075

OptiMOS® -P Small-Signal-Transistor

Infineon Technologies 

13 Typ. avalanche energy

EAS = f (Tj), par.: ID = -0.39 A

VDD = -10 V, RGS = 25 Ω

1.4

mJ

Preliminary data

BSS 223PW

14 Typ. gate charge

VGS = f (QGate)

parameter: ID = -0.39 A pulsed; Tj = 25 °C

BSS 223PW

-16

V

1

0.8

0.6

0.4

0.2

0

20 40 60 80 100 120 °C 160

Tj

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-12

-10

-8

20%

-6 50%

80%

-4

-2

0

0

0.2 0.4 0.6 0.8

1 nC 1.3

|QGate|

-24.5 BSS 223PW

V

-23.5

-23

-22.5

-22

-21.5

-21

-20.5

-20

-19.5

-19

-18.5

-18

-60 -20

20

60 100 °C

180

Tj

Page 7

2002-07-04

Share Link: