IIRLR7807Z 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

比赛名单

IIRLR7807Z

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRLR7807Z, IIRLR7807Z

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤13.8mΩ

·Enhancement mode:

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·High Frequency Synchronous Buck Converters For Computer

Processor Power

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

30

VGS

Gate-Source Voltage

±20

ID

Drain Current-Continuous

43

IDM

Drain Current-Single Pulsed

170

PD

Total Dissipation @TC=25℃

40

Tj

Max. Operating Junction Temperature

175

Tstg

Storage Temperature

-55~175

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(j-c) Channel-to-case thermal resistance

Rth(j-a) Channel-to-ambient thermal resistance

MAX

3.75

110

UNIT

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

Share Link: