IIRLR7807Z 查看數據表（PDF） - Inchange Semiconductor

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IIRLR7807Z

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRLR7807Z IIRLR7807Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=15A

IGSS

Gate-Source Leakage Current

VGS= ±20V

IDSS

Drain-Source Leakage Current

VDS=24V; VGS= 0V

VSD

Diode forward voltage

Is=12A, VGS = 0V

MIN TYP MAX UNIT

30

V

1.35

2.25

V

13.8 mΩ

±0.1 μA

1

μA

1.0

V

isc website：www.iscsemi.cn

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