IRFF310 查看數據表（PDF） - New Jersey Semiconductor
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IRFF310 Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFF310
, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1.35A, 400V, 3.600 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF310
TO-205AF
IRFF310
NOTE: When ordering, include the entire part number.
Feafares
• 1.35A, 400V
• rDS(ON) = 3.600Q
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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