IRFF310 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
比赛名单
IRFF310 Datasheet PDF : 3 Pages
| |||
IRFF310
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
[so
'SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
u
^~^ \
y t-0/^I'^5_3^-A( S
MIN TYP
-
-
-
-
Source to Drain Diode Voltage (Note 2)
VSD Tj = 25°C, ISD = 1.35A, VGS = 0V (Figure 13)
-
-
Reverse Recovery Time
trr
Tj = 150°C, ISD = 1-35A, dlSD/d, = lOOA/us
-
380
Reverse Recovered Charge
QRR Tj = 150°C, ISD = 1.35A, dlSD/dt = 100A/|.is
-
2.7
NOTES:
2. Pulse test: pulse width < 30-O^s, duty cycle < 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, start Tj = 25°C, L = 44.89nH, RG = 50H, peak IAS = 1.35A (See Figures 15, 16).
MAX
1.35
5.5
UNITS
A
A
1.6
V
-
ns
-
HC
Typical Performance Curves Tc = 25°C, Unless Otherwise Specified
1.0
5 0.8
O
0.6
OT
§ 0.4
oc.
0.2
\^
\
n
50
100
150
Tc, CASE TEMPERATURE (°C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1.4
< 1.2 ^^J
K
I 1-°
tt
3 0.8
1 °'6
Q
0 0.4
«^.
»w^
^
^x.
\ ^
0.2
0
25
50
75
100
125
15
Tc, CASE TEMPERATURE (°C)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
NOTES:
DUTY FACTOR: D = t-|/t2
PEAK Tj = PDM x Z9JC x ReJC + Tc
RECTANGULAR PULSE DURATION(LC)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Share Link: 