W16NA40 查看數據表（PDF） - STMicroelectronics
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W16NA40 Datasheet PDF : 6 Pages
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STW16NA40-STH16NA40FI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
0.69
ISOWATT218
1.78
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
16
435
23
10
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
IDSS
IGSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Tc = 100 oC
Min.
400
Typ.
Max.
25
250
±100
Unit
V
µA
µA
nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On
Resistance
On State Drain Current
VGS = 10V ID = 8 A
VGS = 10V ID = 8 A
VDS > ID(on) x RDS(on)max
VGS = 10 V
Tc = 100oC
Min.
2.25
16
Typ.
3
0.21
Max.
3.75
0.3
0.6
Unit
V
Ω
Ω
A
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max
ID = 8 A
Min.
9
VDS = 25 V f = 1 MHz VGS = 0
Typ.
12
2600
390
120
Max.
3500
540
160
Unit
S
pF
pF
pF
2/6
®
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