W16NA40 查看數據表（PDF） - STMicroelectronics
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W16NA40 Datasheet PDF : 6 Pages
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STW16NA40-STH16NA40FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Test Conditions
VDD = 200 V
RG = 4.7 Ω
VDD = 320 V
RG = 47 Ω
ID = 8 A
VGS = 10 V
ID = 16 A
VGS = 10 V
Min.
Typ.
20
18
380
Max.
25
24
Unit
ns
ns
A/µs
Qg
Total Gate Charge
145
nC
Qgs Gate-Source Charge VDD = 320 V ID = 16 A VGS = 10 V
15
nC
Qgd Gate-Drain Charge
50
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 320 V
RG = 4.7 Ω
ID = 16 A
VGS = 10 V
Min.
Typ.
25
20
45
Max.
35
25
60
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 16 A
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 16 A
VDD = 100 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
VGS = 0
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
550
9.6
35
Max.
16
64
1.6
Unit
A
A
V
ns
µC
A
3/6
®
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