BUK7509-75A 查看數據表（PDF） - Philips Electronics

零件编号

产品描述 (功能)

比赛名单

BUK7509-75A

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

BUK7509-75A; BUK7609-75A

TrenchMOS™ standard level FET

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter

VDS

ID

Ptot

Tj

RDSon

drain-source voltage (DC)

drain current (DC)

total power dissipation

junction temperature

drain-source on-state resistance

6. Limiting values

Conditions

Tmb = 25 °C; VGS = 10 V

Tmb = 25 °C

VGS = 10 V; ID = 25 A

Tj = 175 °C

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

VDGR

VGS

ID

drain-source voltage (DC)

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

RGS = 20 kΩ

Tmb = 25 °C; VGS = 10 V;

Figure 2 and 3

IDM

peak drain current

Tmb = 100 °C; VGS = 10 V; Figure 2

Tmb = 25 °C; pulsed; tp ≤ 10 µs;

Figure 3

Ptot

total power dissipation

Tstg

storage temperature

Tj

operating junction temperature

Source-drain diode

Tmb = 25 °C; Figure 1

IDR

reverse drain current (DC)

IDRM

pulsed reverse drain current

Avalanche ruggedness

Tmb = 25 °C

Tmb = 25 °C; pulsed; tp ≤ 10 µs

WDSS non-repetitive avalanche energy

unclamped inductive load; ID = 75 A;

VDS ≤ 75 V; VGS = 10 V; RGS = 50 Ω;

starting Tmb = 25 °C

Typ

Max Unit

−

75

V

−

75

A

−

230

W

−

175

°C

7.7

9

mΩ

−

18.9 mΩ

Min

Max Unit

−

75

V

−

75

V

−

±20

V

−

75

A

−

65

A

−

440

A

−

230

W

−55

+175 °C

−55

+175 °C

−

75

A

−

440

A

−

560

mJ

9397 750 07655

Product specification

Rev. 02 — 06 November 2000

© Philips Electronics N.V. 2000. All rights reserved.

2 of 15

Share Link: