BUK7509-75A 查看數據表（PDF） - Philips Electronics
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BUK7509-75A Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
75
−
−
V
Tj = −55 °C
70
−
−
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 75 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
2
3
4
V
1
−
−
V
−
−
4.4
V
−
0.05
10
µA
−
−
500
µA
−
2
100
nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
−
7.7
9
mΩ
−
−
18.9
mΩ
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
−
Coss
output capacitance
f = 1 MHz; Figure 12
−
Crss
reverse transfer capacitance
−
td(on)
tr
turn-on delay time
rise time
VDD = 30 V; RL = 1.2 Ω;
−
VGS = 10 V; RG = 10 Ω
−
td(off)
turn-off delay time
−
tf
fall time
−
Ld
internal drain inductance
from drain lead 6mm from
−
package to centre of die
5068
6760
pF
1082
1300
pF
620
850
pF
35
−
ns
107
−
ns
183
−
ns
100
−
ns
4.5
−
nH
from contact screw on
−
3.5
−
nH
mounting base to centre of
die SOT78
from upper edge of drain
−
2.5
−
nH
mounting base to centre of
die SOT404
Ls
internal source inductance from source lead to source
−
7.5
−
nH
bond pad
9397 750 07655
Product specification
Rev. 02 — 06 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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