HS9-6617RH-Q 查看數據表（PDF） - Intersil

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HS9-6617RH-Q

Radiation Hardened 2K x 8 CMOS PROM

Intersil 

Die Characteristics

DIE DIMENSIONS:

164mils x 250mils x 19mils ±1mils

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8kÅ ± 1kÅ

Top Metallization:

Type: Silicon-Aluminum

Thickness: 13kÅ ± 2kÅ

Metallization Mask Layout

A2 (6)

HS-6617RH

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

VDD

ADDITIONAL INFORMATION:

Worst Case Current Density:

1 x 105 A/cm2

HS-6617RH

(20) G

(19) A10

A1 (7)

A0 (8)

(18) E

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