SML100C4 查看數據表（PDF） - Semelab - > TT Electronics plc

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SML100C4

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Semelab - > TT Electronics plc  

SML100C4

TO–254 Package Outline.

Dimensions in mm (inches)

3.53 (0.139)

3.78 (0.149)

Dia.

13.59 (0.535)

13.84 (0.545)

6.32 (0.249)

6.60 (0.260)

1.02 (0.040)

1.27 (0.050)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

123

3.81 (0.150)

BSC

0.89 (0.035)

1.14 (0.045)

Pin 1 – Drain

Pin 2 – Source

D

3.81 (0.150)

BSC

Pin 3 – Gate

VDSS

ID(cont)

RDS(on)

1000V

3.6A

4.009

• Faster Switching

• Lower Leakage

• TO–254 Hermetic Package

G

S

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDSS

Drain – Source Voltage

ID

Continuous Drain Current

IDM

Pulsed Drain Current 1

VGS

Gate – Source Voltage

PD

Total Power Dissipation @ Tcase = 25°C

Derate Linearly

TJ , TSTG Operating and Storage Junction Temperature Range

TL

Lead Temperature : 0.063” from Case for 10 Sec.

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

THERMAL CHARACTERISTICS

Characteristic

RGJC

RGJA

Junction to Case

Junction to Ambient

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

1000

3.6

14.4

±30

125

1.0

-55 to +150

300

V

A

V

W

W/°C

°C

Min.

Typ.

Max. Unit

1.00

°C/W

50

6/99

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