P4C1981-10JC 查看數據表（PDF） - Performance Semiconductor
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P4C1981-10JC Datasheet PDF : 10 Pages
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P4C1981/1981L, P4C1982/1982L
AC CHARACTERISTICS—READ CYCLE
(V
CC
=
5V
±
10%,
All
Temperature
Ranges)(2)
Sym.
Parameter
-10
-12
-15
-20
-25
-35
-45 Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
t Read Cycle Time 10
12
15
20
25
35
45
ns
RC
tAA Address Access
10
12
15
20
25
35
45 ns
Time
tAC Chip Enable
Access Time
10
12
15
20
25
35
45 ns
tOH Output Hold from 2
2
2
2
2
2
2
ns
Address Change
tLZ Chip Enable to
2
2
2
2
2
2
2
ns
Output in Low Z
t Chip Disable to
6
7
8
10
10
15
15 ns
HZ
Output in High Z
tOE Output Enable
6
7
8
12
15
21
27 ns
Low to Data Valid
tOLZ Output Enable to 2
2
2
2
2
2
2
ns
Output in Low Z
t Output Disable to
6
7
9
9
10
14
15 ns
OHZ
Output in High Z
tPU Chip Enable to
0
0
0
0
0
0
0
ns
Power Up Time
tPD Chip Disable to
10
12
15
20
25
25
30 ns
Power Down Time
READ CYCLE NO.1 (OE controlled)(5)
ADDRESS
OE
CE1, CE2
DATA OUT
t AA
t OE
tOLZ (9)
t AC
t LZ (9)
(10)
t RC
t OH
t
(9)
OHZ
t
(9)
HZ
Notes:
5. WE is HIGH for READ cycle.
6.
CE1,
CE
2
and
OE
are
LOW
for
READ
Cycle.
7. OE is LOW for the cycle.
8. ADDRESS must be valid prior to or coincident with, CE1, and
CE
2
transition
LOW.
9. Transition is measured ±200mV from steady state voltage
prior to change, with loading as specified in Figure 1.
10. Read Cycle Time is measured from the last valid address to
the first transitioning address.
84
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