R6030JNZ 查看數據表（PDF） - ROHM Semiconductor
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R6030JNZ Datasheet PDF : 14 Pages
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R6030JNZ
Nch 600V 30A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-3PF
RDS(on)(Max.)
0.143Ω
ID
±30A
PD
93W
lFeatures
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
lInner circuit
lApplication
Switching applications
lPackaging specifications
Packing
Tube
Packing code
C17
Marking
R6030JNZ
Quantity (pcs)
300
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
Continuous drain current (Tc = 25°C)
ID*1
±30
A
Pulsed drain current
IDP*2
±90
A
Gate - Source voltage
VGSS
±30
V
Avalanche current, single pulse
IAS*3
8.1
A
Avalanche energy, single pulse
EAS*3
717
mJ
Power dissipation (Tc = 25°C)
PD
93
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20191226 - Rev.002
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