R6030JNZ 查看數據表（PDF） - ROHM Semiconductor

零件编号

产品描述 (功能)

比赛名单

R6030JNZ

Nch 600V 30A Power MOSFET

ROHM Semiconductor 

R6030JNZ

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Input capacitance

Output capacitance

Reverse transfer capacitance

Effective output capacitance

energy related

Ciss VGS = 0V

Coss VDS = 100V

Crss f = 1MHz

Co(er)*6 VGS = 0V

- 2500 -

- 140 -

- 2.2 -

pF

- 105 -

Effective output capacitance

time related

Co(tr)*7 VDS = 0V to 480V

- 420 -

Turn - on delay time

Rise time

Turn - off delay time

Fall time

td(on)*5 VDD ⋍ 300V, VGS = 15V

-

37

-

tr*5

td(off)*5

ID = 15A

RL ⋍ 20.0Ω

- 26 -

ns

- 70 -

tf*5 RG = 10Ω

- 25 -

lGate charge characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Total gate charge

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

Qg*5

Qgs*5

Qgd*5

V(plateau)

VDD ⋍ 300V

ID = 30A

VGS = 15V

VDD ⋍ 300V, ID = 30A

Values

Unit

Min. Typ. Max.

- 74 -

- 23.5 - nC

- 26.5 -

- 9.3 -

V

*1 Limited only by maximum temperature allowed.

*2 Pw ≤ 10μs, Duty cycle ≤ 1%

*3 L ⋍ 50mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C

*4 Tc=25℃

*5 Pulsed

*6 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising

　　from 0 to 80% VDSS.

*7 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising

　 from 0 to 80% VDSS.

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

www.rohm.com

© 2019 ROHM Co., Ltd. All rights reserved.

3/11

20191226 - Rev.002

Share Link: