MX1011B200Y 查看數據表（PDF） - Philips Electronics
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MX1011B200Y Datasheet PDF : 12 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
MX1011B200Y
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
Zth
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base Tj = 120 °C
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
tp = 10 µs; δ = 1%;
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
MAX.
2.5
0.2
0.16
UNIT
K/W
K/W
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
ICES
IEBO
V(BR)CBO
V(BR)CES
collector cut-off current
collector cut-off current
emitter cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
CONDITIONS
IE = 0; VCB = 50 V
VBE = 0; VCE = 50 V
IC = 0; VEB = 1.5 V
IC = 40 mA
IC = 40 mA; VBE = 0
MAX.
6
6
1.5
65
65
UNIT
mA
mA
mA
V
V
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3.
MODE OF
OPERATION
CONDITIONS
f
VCC
PL
Gp
(GHz)
(V)
(W)
(dB)
Class C
tp = 10 µs; δ = 1%
tp = 0.5 µs; δ = 50%
tp = 112 µs; δ = 1%
tp = 6.6 µs; δ = 51%
tp = 3.3 µs; δ = 43%
tp = 32 µs; δ = 1%
1.09
50
1.03 to 1.09
50
1.03 to 1.15
50
1.09
50
≥200
typ. 220
typ. 220
typ. 100
typ. 210
≥7.5
typ. 8.3
typ. 7.5
typ. 6
typ. 7.5
ηC
(%)
≥45
typ. 52
typ. 50
typ. 35
typ. 47
1997 Feb 18
4
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