STW16NB60 查看數據表（PDF） - STMicroelectronics

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STW16NB60

N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET

STMicroelectronics 

STW16NB60

N-CHANNEL 600V - 0.3Ω - 16A TO-247

PowerMesh™ MOSFET

TYPE

VDSS

RDS(on)

ID

STW16NB60

600V < 0.35 Ω 16 A

s TYPICAL RDS(on) = 0.3Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

April 2003

Value

600

600

±30

16

10

64

220

1.76

4

–65 to 150

150

Unit

V

V

V

A

A

A

W

W/°C

V/ns

°C

°C

(1)ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

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