STP8NK80Z 查看數據表（PDF） - STMicroelectronics

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STP8NK80Z

N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220 - TO-247 TO-220FP

VDS

VGS

ID

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s; Tc= 25°C)

Tj

Max operating Junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤6.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

6.2

3.9

24.8

140

1.12

800

± 30

4000

4.5

6.2 (1)

3.9 (1)

24.8(1)

30

0.24

-

2500

-55 to 150

Unit

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

Value

TO-220 TO-220FP

0.89

4.2

62.5

Unit

TO-247

0.89 °C/W

50 °C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj Max)

Single pulse avalanche energy

EAS (starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

6.2

A

300

mJ

3/15

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