STP8NK80Z 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STP8NK80Z

N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

V(BR)DSS

Drain-source

Breakdown voltage

Zero gate voltage

IDSS Drain current (VGS = 0)

IGSS

Gate-body leakage

Current (VDS = 0)

VGS(th) Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID =1mA, VGS = 0

800

VDS = Max rating

VDS = Max rating, @125°C

V

1 µA

50 µA

VGS = ± 20 V

VDS = VGS, ID = 100 µA

VGS = 10 V, ID = 3.1 A

± 10 µA

3 3.75 4.5 V

1.3 1.5 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 15v, ID = 3.1 A

5.2

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

VDS = 25 V, f = 1 MHz,

Reverse transfer capacitance VGS = 0

1320

pF

143

pF

27

pF

Coss eq. (2) Equivalent output

capacitance

VDS =0V, VDS = 0V to 640V

58

pF

td(on)

tr

tr(off)

tr

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 400 V, ID = 3.1 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 21)

17

ns

30

ns

48

ns

28

ns

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 6.2 A,

VGS = 10 V

46

nC

8.5

nC

25

nC

tr(Voff)

tr

tc

Off-voltage rise time

Fall time

Cross-over time

VDD = 640 V, ID = 6.2 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 23)

9

ns

9

ns

18

ns

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

4/15

Share Link: