IRF530 查看數據表（PDF） - Philips Electronics
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IRF530 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF530N
Drain current, ID (A)
20
18 VDS > ID X RDS(ON)
16
14
12
10
8
175 C
6
Tj = 25 C
4
2
0
012345678
Gate-source voltage, VGS (V)
9 10
Fig.7. Typical transfer characteristics.
ID = f(VGS)
Transconductance, gfs (S)
15
14 VDS > ID X RDS(ON)
13
Tj = 25 C
12
11
10
9
175 C
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
4.5
4
maximum
3.5
3
typical
2.5
2
minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1.0E-01 Drain current, ID (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
Ciss
Coss
100
Crss
10
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1999
4
Rev 1.100
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