106C025-20-W-AG 数据手册 ( 数据表 ) - Transys Electronics Limited
零件编号
106C025-20-W-AG
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no available.
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page
1 Pages
File Size
153 kB
生产厂家
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
零件编号
产品描述 (功能)
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生产厂家
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
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