1116 数据手册 ( 数据表 ) - NEC => Renesas Technology
零件编号
1116
产品描述 (功能)
Other PDF
no available.
PDF
page
6 Pages
File Size
101.9 kB
生产厂家
NEC => Renesas Technology
FEATURES
• Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA)
• High PT in small dimension with general-purpose
PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A
• Complementary transistor with 2SD1616 and 1616A
零件编号
产品描述 (功能)
PDF
生产厂家
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
NEC => Renesas Technology
Share Link: