1N5536AUR-1 数据手册 ( 数据表 ) - Microsemi Corporation
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1N5536AUR-1
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Microsemi Corporation
• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437
• ZENER DIODE, 500mW
• LEADLESS PACKAGE FOR SURFACE MOUNT
• LOW REVERSE LEAKAGE CHARACTERISTICS
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +125°C
DC Power Dissipation: 500 mW @ TEC = +125°C
Power Derating: 10 mW / °C above TEC = +125°C
Forward Voltage @ 200mA: 1.1 volts maximum
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