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1N6821 数据手册 ( 数据表 ) - Microsemi Corporation

1N6821 image

零件编号
1N6821

产品描述 (功能)

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page
3 Pages

File Size
68.5 kB

生产厂家
Microsemi
Microsemi Corporation Microsemi

Features
● Tungsten/Platinum schottky barrier
● Oxide passivated structure for very low leakage currents
● Guard ring protection for increased reverse energy capability
● Epitaxial structure minimizes forward voltage drop
● Hermetically sealed, low profile ceramic surface mount power package
● Low package inductance
● Very low thermal resistance
● Available as standard polarity (strap-to-anode, 1N6821) and reverse
   polarity (strap-to-cathode: 1N6821R)

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零件编号
产品描述 (功能)
PDF
生产厂家
LOW VOLTAGE DROP SCHOTTKY DIODE
Microsemi Corporation
LOW VOLTAGE DROP SCHOTTKY DIODE
Microsemi Corporation
LOW VOLTAGE DROP SCHOTTKY DIODE
Microsemi Corporation
Low Forward Voltage drop Diode
Nihon Inter Electronics
Low Forward Voltage Drop Diode
Nihon Inter Electronics
Low Forward Voltage drop Diode
Nihon Inter Electronics
Low Forward Voltage drop Diode
Nihon Inter Electronics
Low Forward Voltage Drop Diode
Nihon Inter Electronics
Low Forward Voltage Drop Diode
Nihon Inter Electronics
Low Forward Voltage drop Diode
Nihon Inter Electronics

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