Description
This device is a N-channel SuperMESH™ that is obtained through an optimization of STMicroelectronics’ well-established strip-based PowerMESH™ layout. In addition to pushing on resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This seriescomplement STs’ full range of high voltage Power MOSFETs.
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ ESD improved capability
■ New high voltage benchmark
Application
Switching applications