GENERAL DESCRIPTION
The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package.

ABSOLUTE MAXIMUM RATINGS
    Maximum Power Dissipation @ 25℃ 6.0 Watts
    Maximum Voltage and Current
    BVces Collector to Emitter Voltage 50 Volts
    BVebo Emitter to Base Voltage 3.5 Volts
    Ic Collector Current 800 mA
    Maximum Temperatures
    Storage Temperature - 65 to + 200℃
    Operating Junction Temperature + 200℃