2N5620 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
2N5620
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New Jersey Semiconductor
DESCRIPTION
• DC Current Gain- : hFE= 30-90@IC= 2.5A
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min)
• Complement to Type 2N5619
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio power amplifier and drivers.
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