Description:
The 2N5882 is a silicon NPN transistor in a TO−3 type package designed for use in general purpose power amplifier and switching applications.

FEATUREs:
● Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A
● Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A