2N6052(2001) 数据手册 ( 数据表 ) - ON Semiconductor
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2N6052
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ON Semiconductor
Darlington Complementary Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain —
hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
100 Vdc (Min) — 2N6052, 2N6059
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
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