Darlington Silicon Power Transistors

Designed for general−purpose amplifier and low speed switching applications.

• High DC Current Gain −
   hFE = 3500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 200 mAdc
   VCEO(sus) = 60 Vdc (Min) − 2N6667
                      = 80 Vdc (Min) − 2N6668
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• Complementary to 2N6387, 2N6388
• These Devices are Pb−Free and are RoHS Compliant*