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2N7002K 数据手册 ( 数据表 ) - HY ELECTRONIC CORP.

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零件编号
2N7002K

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4 Pages

File Size
241.9 kB

生产厂家
HY
HY ELECTRONIC CORP. HY

RDS(ON), VGS @10V, IDS@ 500mA=2Ω
RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω


FEATURES
• Advanced Trench Process Technology
• Ultra Low On Resistance : 2Ω
• Fast Switching Speed : 20ns
• Low Input and Output Leakage Current
• 2KV ESD Protection
• Specially Designed for High Speed Circuit, Battery Operated System, Drivers : Lamps, Transistors, Relays, Memories, Display, etc..
• Compliant to EU RoHS Directive 2002/95/EC

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零件编号
产品描述 (功能)
PDF
生产厂家
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
HY ELECTRONIC CORP.
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2012 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL

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