2SA2005 数据手册 ( 数据表 ) - ROHM Semiconductor
零件编号
2SA2005
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生产厂家
ROHM Semiconductor
Features
1) Electrical characteristics of DC current gain hFE is flat.
2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA)
3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz)
4) Wide SOA.
APPLICATIONs
Power amplifier
Velosity modulation
Structure
PNP Silicon Epitaxial Planar Transistor
零件编号
产品描述 (功能)
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生产厂家
For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)
ROHM Semiconductor
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