2SB1020 数据手册 ( 数据表 ) - New Jersey Semiconductor
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2SB1020
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New Jersey Semiconductor
DESCRIPTION
• High DC C urrent Gain- : hFE= 2000(Min.)@lc=-3A
• Low Collector Saturation Voltage- :VCE(sat)=-1.5V(Max)@lc=-3A
• Good Linearity of hFE
• Complement to Type 2SD1415
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications.
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