2SB1257 数据手册 ( 数据表 ) - New Jersey Semiconductor
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2SB1257
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V,BR)CEo= -60V(Min)
• High DC Current Gain- : hFt= 2000(Min)@lc= -3A
• Complement to Type 2SD2014
APPLICATIONS
• Driver for solenoid, relay and motor and general purpose applications.
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