2SB1340 数据手册 ( 数据表 ) - Inchange Semiconductor
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2SB1340
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)
• High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A)
• Complement to Type 2SD1889
APPLICATIONS
• Designed for power amplifier applications.
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