2SC5180 数据手册 ( 数据表 ) - NEC => Renesas Technology
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2SC5180
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NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S21e|2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Supper Mini-Mold package
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