2SC5336 数据手册 ( 数据表 ) - NEC => Renesas Technology
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2SC5336
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NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
• High gain | S21|2= 12 dB TYP, @f = 1 GHz, VCE= 10 V, Ic = 20 mA
• New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357
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