Features
1) Low VCE(sat).
    VCE(sat) = 0.25V (Typ.)
    (IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326.

Structure
   Epitaxial planar type
   NPN silicon transistor