2SD2114K 数据手册 ( 数据表 ) - ROHM Semiconductor
零件编号
2SD2114K
PDF
page
5 Pages
File Size
75.7 kB
生产厂家
ROHM Semiconductor
Features
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
零件编号
产品描述 (功能)
PDF
生产厂家
High Current Gain Medium Power NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
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