2SD2162 数据手册 ( 数据表 ) - Inchange Semiconductor
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2SD2162
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Inchange Semiconductor
DESCRIPTION
• High hFE due to Darlington connection
: HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A)
• Low Collector Saturation Voltage-
: VCE(sat) ≤1.5V @ (IC=3A, IB= 3mA)
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for low-frequency power amplifiers and low-speed switching applications.
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