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2SJ533-E 数据手册 ( 数据表 ) - Renesas Electronics

2SJ533 image

零件编号
2SJ533-E

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8 Pages

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生产厂家
Renesas
Renesas Electronics Renesas

•  Low on-resistance RDS (on)= 0.028 Ωtyp.

•  Low drive current.

•  4 V gate drive devices.

•  High speed switching.

 

2SJ533-E

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零件编号
产品描述 (功能)
PDF
生产厂家
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics

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