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2SK2698 数据手册 ( 数据表 ) - Toshiba

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零件编号
2SK2698

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  1998   2006  

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DC−DC Converter, Relay Drive and Motor Drive Applications

● Low drain−source ON resistance : RDS (ON) = 0.35 Ω (typ.)
● High forward transfer admittance : |Yfs| = 11 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
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