Toshiba - 2SK3316 PDF 数据手册 , 2SK3316 数据表

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2SK3316 数据手册 ( 数据表 ) - Toshiba

零件编号

2SK3316

产品描述 (功能)

Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

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2002

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6 Pages

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860.6 kB

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Switching Regulator Applications

● Fast reverse recovery time : trr = 60 ns (typ.)
● Built-in high-speed free-wheeling diode
● Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.)
● High forward transfer admittance : |Yfs| = 3.8 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
● Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

零件编号

产品描述 (功能)

PDF

生产厂家

K2662T

Silicon N-Channel MOS Type (π−MOSV) Field Effect Transistor

视图

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2SK3462

Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)

视图

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2SK3067

Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor ( Rev : 2006 )

视图

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2SK2398

Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor

视图

Toshiba

2SK3407

Silicon N Channel MOS Type (π-MOSV) Field Effect Transistor

视图

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2SK3126

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )

视图

Toshiba

2SK3067

Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor

视图

Toshiba

K2865

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )

视图

Toshiba

2SK3371

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )