Toshiba - 2SK3561 PDF 数据手册 , 2SK3561 数据表

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2SK3561(2003) 数据手册 ( 数据表 ) - Toshiba

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2SK3561

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)

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Switching Regulator Applications

● Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
● High forward transfer admittance: |Yfs| = 6.5S (typ.)
● Low leakage current: IDSS = 100 μ A (VDS = 500 V)
● Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

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SSM3K123TU

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

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SSM3K301T

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )

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