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2SK367(1997) 数据手册 ( 数据表 ) - Toshiba

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2SK367

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE

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FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIONS

• High Breakdown Voltage: VGDS = −100 V (Min.)
• High Input Impedance: IGSS = −1.0 nA (Max.) (VGS = −80 V)
• Small Package

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2SK117

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )

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2SK118

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

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2SK211

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )

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2SK246

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

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2SK3320-GR

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

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2SK879

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

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2SK184

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )

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2SK330

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )

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2SK363

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )

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Toshiba

2SK364

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )

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Toshiba

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