2SK3935(2006) 数据手册 ( 数据表 ) - Toshiba
零件编号
2SK3935
Other PDF
PDF
page
6 Pages
File Size
309.6 kB
生产厂家
Toshiba
Switching Regulator Applications
• Low drain-source ON resistance : RDS (ON) = 0.18Ω (typ.)
• High forward transfer admittance : |Yfs| = 10 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
零件编号
产品描述 (功能)
PDF
生产厂家
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
Share Link: