Description
The device is PNP transistor manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

FEATUREs
• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast-switching speed

APPLICATIONs
• Emergency lighting
• LED
• Voltage regulation
• Relay drive