3DD101B(V2) 数据手册 ( 数据表 ) - Inchange Semiconductor
零件编号
3DD101B
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2 Pages
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
• DC Current Gain-
: hFE= 20(Min.)@IC= 2A
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
• Designed for power amplifier,DC-DC converter and regulated
power supply applications.
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